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STM8AF6366TCY Datasheet(PDF) 69 Page - STMicroelectronics

Part # STM8AF6366TCY
Description  Automotive 8-bit MCU, with up to 128-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, USART, SPI, I2C, 3 to 5.5 V
PDF  116 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6366TCY Datasheet(HTML) 69 Page - STMicroelectronics

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STM8AF6388
Electrical characteristics
114
Figure 20. HSE oscillator circuit diagram
HSE oscillator critical gm formula
The crystal characteristics have to be checked with the following formula:
Equation 1
where gmcrit can be calculated with the crystal parameters as follows:
Equation 2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1 = CL2 = C: Grounded external capacitance
Table 30. HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
-
220
-
k
Ω
CL1/CL2(1) Recommended load capacitance
-
-
-
20
pF
gm
Oscillator trans conductance
-
5
-
-
mA/V
tSU(HSE)(2) Startup time
VDD is
stabilized
-2.8
-
ms
1. The oscillator needs two load capacitors, CL1 and CL2, to act as load for the crystal. The total load capacitance (CLoad) is
(CL1 * CL2)/(CL1 + CL2). If CL1 = CL2, Cload = CL1/2. Some oscillators have built-in load capacitors, CL1 and CL2.
2. This value is the startup time, measured from the moment it is enabled (by software) until a stabilized 24 MHz oscillation is
reached. It can vary with the crystal type that is used.
MSv37799V1
OSCOUT
OSCIN
fHSE to core
CL1
RF
STM8
Resonator
Current control
gm
Rm
Cm
Lm
Resonator
CL2
CO
gm gmcrit
»
gmcrit
2
Π
×
HSE
f
×
()
2
Rm
×
2Co C
+
()
2
=



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