BCV61 datasheet(3/13 Pages) NEXPERIA

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BCV61

Product data sheet

Rev. 04 — 18 December 2009

3 of 13

Nexperia

BCV61

NPN general-purpose double transistors

Thermal characteristics

[1]

Device mounted on an FR4 PCB.

Characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1] -

500

K/W

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Transistor TR1

ICBO

collector-base cut-off current

VCB =30V;

IE =0A

--15

VCB =30V;

IE =0A;

Tj = 150 °C

--5

μA

IEBO

emitter-base cut-off current

VEB =5V;

IC =0A

100

hFE

DC current gain

VCE =5V;

IC = 100 μA

100

VCE =5V;

IC =2mA

110

800

VCEsat

collector-emitter saturation

voltage

IC =10mA;

IB =0.5 mA

250

IC = 100 mA;

IB =5mA

200

600

VBEsat

base-emitter saturation voltage

IC =10mA;

IB =0.5 mA

[1] -

700

IC = 100 mA;

IB =5mA

[1] -

900

VBE

base-emitter voltage

IC =2mA;

VCE =5V

[2] 580

660

700

IC =10mA;

VCE =5V

[2] -

770

transition frequency

VCE =5V;

IC =10mA;

f = 100 MHz

100

MHz

collector capacitance

VCB =10V;

IE =ie =0A;

f= 1MHz

-2.5

-pF

noise figure

VCE =5V;

IC = 200 μA;

RS =2kΩ;

f= 1kHz;

B=200 Hz

--10

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