BCV61

©

Nexperia B.V. 2009. All rights reserved.

Product data sheet

Rev. 04 — 18 December 2009

2 of 13

Nexperia

BCV61

NPN general-purpose double transistors

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB).

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BCV61

-

plastic surface-mounted package; 4 leads

SOT143B

BCV61A

BCV61B

BCV61C

Table 4.

Marking codes

Type number

Marking code[1]

BCV61

1M*

BCV61A

1J*

BCV61B

1K*

BCV61C

1L*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

30

V

VCEO

collector-emitter voltage

open base

-

30

V

VEBS

emitter-base voltage

VCE =0V

-

6

V

IC

collector current

-

100

mA

ICM

peak collector current

-

200

mA

IBM

peak base current

-

200

mA

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C