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BA315 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BA315 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page ![]() 1996 Mar 21 3 Philips Semiconductors Product specification Low-voltage stabistor BA315 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 480 − 540 mV IF = 1 mA 590 − 660 mV IF = 5 mA 670 − 740 mV IF = 10 mA 710 − 790 mV IF = 100 mA 875 − 1050 mV IR reverse current VR =5V −− 1500 nA rdif differential resistance IF = 1 mA; f = 1 kHz − 50 −Ω IF = 10 mA; f = 1 kHz − 67 Ω SF temperature coefficient IF =1mA −−2.1 − mV/K Cd diode capacitance VR =0V; f=1MHz −− 3pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W Rth j-a thermal resistance from junction to ambient maximum lead length 600 K/W |
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