CEP25N55LS datasheet(1/5 Pages) CET-MOS

Part #	CEP25N55LS

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Manufacturer	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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CEP25N55LS/CEB25N55LS

CEF25N55LS

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM e

550

1.64

205

92

23

±30

V

W

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS

RDS(ON)

ID

@VGS

CEP25N55LS

CEF25N55LS

550V

0.14Ω

23A

23A d

10V

0.28

35

92 d

23 d

CEB25N55LS

550V

0.14Ω

23A

10V

RoHS compliant.

TO-220/263

TO-220F

http://www.cet-mos.com

Rev 1. 2019.Oct

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

A

15

15 d

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

0.61

RθJC

RθJA

3.6

65

Single Pulsed Avalanche Energy h

Single Pulsed Avalanche Current h

EAS

IAS

600

5

mJ

A

Details are subject to change without notice .

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CEP25N55LS Datasheet(PDF) 1 Page - CET-MOS Technology Corp.

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