1996 Mar 13

2

Philips Semiconductors

Product specification

Band-switching diode

BAT18

FEATURES

• Continuous reverse voltage:

max. 35 V

• Continuous forward current:

max. 100 mA

• Low diode capacitance:

max. 1.0 pF

• Low diode forward resistance:

max. 0.7

Ω.

APPLICATION

• Band switching.

DESCRIPTION

Planar high performance

band-switching diode in a small

rectangular plastic SOT23 SMD

package.

PINNING

PIN

DESCRIPTION

1

anode

2

not connected

3

cathode

Fig.1 Simplified outline (SOT23) and symbol.

Marking code: A2.

handbook, halfpage

21

3

MAM185

2

n.c.

1

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Note

1. Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

continuous reverse voltage

−

35

V

continuous forward current

−

100

mA

storage temperature

−55

+125

°C

junction temperature

−

125

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

−

1.2

V

reverse current

see Fig.3

−

100

nA

−

1

µA

diode capacitance

0.8

1.0

pF

diode forward resistance

0.5

0.7

Ω

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to tie-point

330

K/W

thermal resistance from junction to ambient

note 1

500

K/W