BAT54C datasheet(3/8 Pages) PHILIPS

3 / 8 page

2002 Mar 04

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT54 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

Note

1. Refer to SOT23 standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

continuous forward current

−

200

IFRM

repetitive peak forward current

tp ≤ 1s; δ≤ 0.5

−

300

IFSM

non-repetitive peak forward current

tp <10ms

−

600

Tstg

storage temperature

−65

+150

°C

junction temperature

−

125

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

−

230

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 0.1 mA

240

IF = 1 mA

320

IF = 10 mA

400

IF = 30 mA

500

IF = 100 mA

800

reverse current

VR = 25 V; see Fig.4

µA

trr

reverse recovery time

when switched from IF =10mA

to IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA;

see Fig.6

5ns

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.5

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