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BB804 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BB804 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1998 Nov 25 3 Philips Semiconductors Product specification VHF variable capacitance double diode BB804 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. VR is the value at which Cd = 38 pF. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode IR reverse current VR = 16 V; see Fig.3 −− 20 nA VR = 16 V; Tj =60 °C; see Fig.3 −− 200 nA rs diode series resistance f = 100 MHz; note 1 − 0.2 −Ω Cd diode capacitance VR = 2 V; f = 1 MHz; see Figs 2 and 4 42 − 46.5 pF VR = 2 V; f = 1 MHz; white 2; see Figs 2 and 4 44 − 45.5 pF capacitance ratio f = 1 MHz 1.65 − 1.75 C d2V () C d8V () ------------------ |
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