BST52

Datasheet Number: DS33022 Rev. 4 - 2

2 of 6

www.diodes.com

December 2011

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A Product Line of

Diodes Incorporated

BST52

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

90

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

10

V

Continuous Collector Current

IC

500

mA

Peak Pulse Current

ICM

1.5

A

Base Current

IB

100

mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

PD

1

W

Thermal Resistance, Junction to Ambient (Note 4)

RθJA

125

°C/W

Thermal Resistance, Junction to Leads (Note 5)

RθJL

8.66

°C/W

Operating and Storage Temperature Range

TJ,TSTG

-55 to +150

°C

Notes:

4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Thermal resistance from junction to solder-point (on the exposed collector pad).

Thermal Characteristics

0

20

40

60

80

100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

25mm x 25mm 1oz Cu

Derating Curve

Temperature (°C)

100µ

1m

10m 100m

1

10

100

1k

0

20

40

60

80

100

120

25mm x 25mm 1oz Cu

T

amb = 25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100µ

1m

10m 100m

1

10

100

1k

1

10

100

25mm x 25mm 1oz Cu

T

amb = 25°C

Single pulse

Pulse Power Dissipation

Pulse Width (s)