BST52

Datasheet Number: DS33022 Rev. 4 - 2

3 of 6

www.diodes.com

December 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

BST52

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

90

-

-

V

IC = 10µA

Collector-Emitter Breakdown Voltage (Notes 6)

BVCEO

80

-

-

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

10

-

-

V

IE = 10µA

Collector Cutoff Current

ICES

-

-

10

µA

VCE = 80V

Emitter Cutoff Current

IEBO

-

-

10

µA

VEB = 8V

DC current transfer Static ratio (Notes 6)

hFE

1000

2000

-

-

IC = 150mA, VCE = 10V

IC = 500mA, VCE = 10V

Collector-Emitter Saturation Voltage (Notes 6)

VCE(sat)

-

-

1.3

1.3

V

IC = 500mA, IB = 0.5mA

IC = 500mA, IB = 0.5mA, TJ=150°C

Base-Emitter Saturation Voltage (Notes 6)

VBE(sat)

-

-

1.9

V

IC = 500mA, IB = 0.5mA

Turn On Time

tON

-

0.4

-

µs

IC = 500mA,

IBon = IBoff = 0.5mA

Turn Off Time

tOFF

1.5

Notes:

6. Measured under pulsed conditions. Pulse width

≤ 300μs. Duty cycle ≤2%.