ISL71831SEH

FN8759 Rev.6.00

Page 5 of 21

Dec 8, 2022

Switch Output Off Leakage

IOUT(OFF)

V+ = 5.5V, VOUT = 5V

All inputs = 0.5V,

TA = +25°C, -55°C

-30

-

30

nA

TA = +125°C

0

-

200

nA

Post radiation, +25°C

-30

-

30

nA

V+ = 5.5V, VOUT = 0.5V

All inputs = 5V,

TA = +25°C, -55°C

-30

-

30

nA

TA = +125°C

-60

-

30

nA

Post radiation, +25°C

-30

-

30

nA

Switch Output Leakage

with Switch Enabled

IOUT(ON)

V+ = 5.5V, VIN = VOUT = 5V

All unused inputs at 0.5V

TA = +25°C, -55°C

-30

-

30

nA

TA = +125°C

0

-

200

nA

Post radiation, +25°C

-30

-

30

nA

V+ = 5.5V, VIN = VOUT = 0.5V

All unused inputs at 5V

TA = +25°C, -55°C

-30

-

30

nA

TA = +125°C

-60

-

30

nA

Post radiation, +25°C

-30

-

30

nA

Logic Input Voltage High/Low

VIH/L

V+ = 5.5V

VREF = 3.3V

1.3

-

1.6

V

Input Current with VAH, VENH

IAH, IENH

V+ = 5.5V

VEN = VA = VREF

-0.1

-

0.1

µA

Input Current with VAL, VENL

IAL, IENL

V+ = 5.5V

VEN = VA = 0V

-0.1

-

0.1

µA

Quiescent Supply Current

ISUPPLY

V+ = VREF = VEN = 5.5V

VA = 0V, TA = +25°C, -55°C

-

-

100

nA

TA = +125°C

-

-

500

nA

Post radiation, +25°C

-

-

300

nA

Reference Quiescent Supply Current

IREF

V+ = VREF = VEN = 5.5V

VA = 0V

--

200

nA

DYNAMIC

Addressing Transition Time

tAHL

V+ = 4.5V; Figure 3

10

-

70

ns

Break-Before-Make Delay

tBBM

V+ = 4.5V; Figure 5

5

18

40

ns

Enable Turn-On Time

tEN(ON)

V+ = 4.5V; Figure 4

--

40

ns

Enable Turn-Off Time

tEN(OFF)

V+ = 4.5V; Figure 4

--

50

ns

Charge Injection

VCTE

CL = 100pF, VIN = 0V, Figure 6

-

1.4

5.0

pC

Off Isolation

VISO

VEN = VREF, RL = open, f = 1kHz

60

--

dB

Crosstalk

VCT

VEN = 0V, f = 1kHz, VP-P = 1V

RL = open

73

--

dB

Input Capacitance

CIN(OFF)

f = 1MHz

-

-

5

pF

Output Capacitance

COUT(OFF)

f = 1MHz

-

-

25

pF

Electrical Specifications (V+ = 5V) GND = 0V, V

REF = 3.3V, VIH = 3.3V, VIL = 0V, TA = +25°C, unless otherwise noted.

Boldface limits apply across the operating temperature range, -55°C to +125°C.; over a total ionizing dose of 75krad(Si) with exposure at a low dose

rate of <10mrad(Si)/s. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 9)TYP

MAX

(Note 9)UNIT