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BB911 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BB911
Description  VHF variable capacitance diode
PDF  4 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BB911 Datasheet(HTML) 2 Page - NXP Semiconductors

  BB911 Datasheet HTML 1Page - NXP Semiconductors BB911 Datasheet HTML 2Page - NXP Semiconductors BB911 Datasheet HTML 3Page - NXP Semiconductors BB911 Datasheet HTML 4Page - NXP Semiconductors  
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1996 May 03
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
BB911/A
FEATURES
• High linearity
• Matched to 2.5%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 2.7 pF; ratio: 25.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band A up to 160 MHz
• VCO.
DESCRIPTION
The BB911/A is a variable
capacitance diode, fabricated in
planar technology, and encapsulated
in the hermetically sealed leaded
glass SOD68 (DO-34) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
20
mA
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+100
°C
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
Cathode side indicated by a red band on a black body.
Additional white band.
handbook, halfpage
MAM234
k
a
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
Note
1. VR is the value at which Cd = 40 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
−−
10
nA
VR = 30 V; Tj =85 °C; see Fig.3
−−
200
nA
rs
diode series resistance
f = 100 MHz; note 1
−−
2
Ω
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
60
−
75
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
2.4
−
2.9
pF
capacitance ratio
f = 1 MHz
23.3
−
28.4
capacitance matching
VR = 0.5 to 28 V
−−
2.5
%
C
d 0.5V
()
C
d28V
()
----------------------
C
d
∆
C
d
----------



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