Nexperia

PDTA143X/123J/143Z/114Y/124XQB

series

50 V, 100 mA PNP resistor-equipped transistors

Symbol

Parameter

Conditions

Min

Typ

Max Unit

bias resistor 1 (input)

PDTA143XQB

3.3

4.7

6.1

kΩ

PDTA123JQB

1.54

2.2

2.86

kΩ

PDTA143ZQB

3.3

4.7

6.1

kΩ

PDTA114YQB

7

10

13

kΩ

R1

PDTA124XQB

[1]

15.4

22

28.6

kΩ

bias resistor ratio

PDTA143XQB

1.7

2.13

2.6

PDTA123JQB

17

21

26

PDTA143ZQB

8

10

12

PDTA114YQB

3.7

4.7

5.7

R2/R1

PDTA124XQB

[1]

1.7

2.13

2.6

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz

[2] -

180

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = ie = 0 A; f = 1 MHz

-

-

3

pF

[1] See "Section 11: Test information" for resistor calculation and test conditions

[2] Characteristics of built-in transistor

IC (mA)

-10-1

-102

-10

-1

006aac846

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 4. PDTA143XQB: DC current gain as a function of

collector current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-018912

-0.04

-0.06

-0.02

-0.08

-0.1

IC

(A)

0

IB = -0.08 mA

-0.24 mA

-0.32 mA

-0.40 mA

-0.48 mA

-0.56 mA

-0.64 mA

-0.72 mA

-0.80 mA

-0.16 mA

Tamb = 25 °C

Fig. 5. PDTA143XQB: Collector current as a function of

collector-emitter voltage; typical values

PDTA143X_TO_124XQB_SER

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Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 28 September 2021

6 / 20