Nexperia

PDTA143X/123J/143Z/114Y/124XQB

series

50 V, 100 mA PNP resistor-equipped transistors

006aac817

IC (mA)

-10-1

-10

-1

-1

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 14. PDTA123JQB: Off-state input voltage as a

function of collector current; typical values

VCB (V)

0

-50

-40

-20

-30

-10

006aac818

3

6

9

Cc

(pF)

0

f = 1 MHz

Tamb = 25 °C

Fig. 15. PDTA123JQB: Collector capacitance as a

function of collector-base voltage; typical

values

IC (mA)

-10-1

-102

-10

-1

006aac824

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 16. PDTA143ZQB: DC current gain as a function of

collector current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-018917

-0.04

-0.06

-0.02

-0.08

-0.1

IC

(A)

0

-0.28 mA

IB = -0.07 mA

-0.35 mA

-0.42 mA

-0.56 mA

-0.49 mA

-0.63 mA

-0.14 mA

-0.21 mA

-0.70 mA

Tamb = 25 °C

Fig. 17. PDTA143ZQB: Collector current as a function of

collector-emitter voltage; typical values

PDTA143X_TO_124XQB_SER

All information provided in this document is subject to legal disclaimers.

©

Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 28 September 2021

9 / 20