BC108 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Sep 03

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

BC107; BC108; BC109

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by about 1.7 mV/K with increasing temperature.

2. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

IE = 0; VCB = 20 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

hFE

DC current gain

IC =10 µA; VCE =5V

BC107A; BC108A

−

BC107B; BC108B; BC109B

150

−

BC108C; BC109C

100

270

−

hFE

DC current gain

IC = 2 mA; VCE =5V

BC107A; BC108A

110

180

220

BC107B; BC108B; BC109B

200

290

450

BC108C; BC109C

420

520

800

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−

250

IC = 100 mA; IB =5mA

−

200

600

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

IC = 100 mA; IB = 5 mA; note 1

−

900

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V; note 2

550

620

700

IC = 10 mA; VCE = 5 V; note 2

−−

770

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCB = 5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 30 Hz to 15.7 kHz

BC109B; BC109C

−−

4dB

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

BC107A; BC108A

BC107B; BC108B; BC108C

−−

BC109B; BC109C

−−

4dB

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