BC141 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 12

Philips Semiconductors

Product speciﬁcation

NPN medium power transistors

BC140; BC141

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

100

IE = 0; VCB =60V; Tj = 150 °C

−

100

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 100 µA; VCE =1V

BC140-10; BC141-10

−

BC140-16; BC141-16

−

hFE

DC current gain

IC = 100 mA; VCE =1V

BC140-10; BC141-10

100

160

BC140-16; BC141-16

100

160

250

hFE

DC current gain

IC = 1 A; VCE =1V

BC140-10; BC141-10

−

BC140-16; BC141-16

−

VCEsat

collector-emitter saturation voltage

IC = 1 A; IB = 100 mA

−

0.6

VBE

base-emitter voltage

IC = 1 A; VCE =1V

−

1.2

1.8

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−−

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz 50

−−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = 100 mA; IBon = 5 mA;

IBoff = −5mA

−−

250

toff

turn-off time

−−

850

BC141 Datasheet(PDF) 4 Page - NXP Semiconductors

BC141 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL