1999 Apr 23

2

Philips Semiconductors

Product specification

NPN medium power transistors

BC635; BC637; BC639

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Driver stages of audio/video amplifiers.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.

PNP complements: BC636, BC638 and BC640.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

3

2

MAM259

2

1

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC635

−

45

V

BC637

−

60

V

BC639

−

100

V

collector-emitter voltage

open base

BC635

−

45

V

BC637

−

60

V

BC639

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

1.5

A

peak base current

−

200

mA

total power dissipation

−

0.83

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C