BC637 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 23

Philips Semiconductors

Product speciﬁcation

NPN medium power transistors

BC635; BC637; BC639

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

100

IE = 0; VCB =30V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

VCE = 2 V; see Fig.2

IC = 5 mA

−

IC = 150 mA

250

IC = 500 mA

−

DC current gain

IC = 150 mA; VCE = 2 V; see Fig.2

BC639-10

160

BC635-16; BC637-16; BC639-16

100

250

VCEsat

collector-emitter saturation voltage

IC = 500 mA; IB =50mA

−

500

VBE

base-emitter voltage

IC = 500 mA; VCE =2V

−

transition frequency

IC = 50 mA; VCE = 5 V; f = 100 MHz

100

−

MHz

DC current gain ratio of the

complementary pairs

I

C = 150 mA; VCE =2V

−

1.6

FE1

FE2

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