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CEU6405 Datasheet(PDF) 3 Page - CET-MOS Technology Corp. |
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CEU6405 Datasheet(HTML) 3 Page - CET-MOS Technology Corp. |
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3 / 5 page ![]() CED6405/CEU6405 3 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 VGS=-10V ID=-10A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=-250µA -50 -25 0 25 50 75 100 125 150 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 30 24 18 12 6 0 0 2 4 6 1 3 5 TJ=125 C -55 C 25 C 0.3 0.6 0.9 1.2 10 0 10 -1 10 1 10 2 1.8 1.5 VGS=0V 1800 Crss 0 1500 1200 900 600 300 0 5 10 15 20 25 Ciss Coss 35 28 21 14 7 0 0 2 6 10 8 4 -VGS=3V -VGS=10,9,8,5V -VGS=4V |
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