CEU6405 datasheet(1/5 Pages) CET-MOS

Part #	CEU6405

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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P-Channel Enhancement Mode Field Effect Transistor

CED6405/CEU6405

FEATURES

-60V, -20A, RDS(ON) = 48mW @VGS = -10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

-60

0.29

36

-80

-20

V

W

A

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

S

D

RDS(ON) = 62mW @VGS = -4.5V.

RoHS compliant.

http://www.cet-mos.com

Rev 3. 2020.June

Details are subject to change without notice .

V

±25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

50

3.5

RqJC

RqJA

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CEU6405 Datasheet(PDF) 1 Page - CET-MOS Technology Corp.

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