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NE76084 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # NE76084
Description  GaAs MES FET
PDF  14 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE76084 Datasheet(HTML) 3 Page - Renesas Technology Corp

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NE76084
GaAs MES FET
FEATURES
•
Low noise figure & High associated gain
NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz
•
Gate length: Lg = 0.3
µm
•
Gate width : Wg = 280
µm
ORDERING INFORMATION
PART NUMBER
SUPPLYING
LEAD LENGTH
MARKING
FORM
NE76084-SL
STICK
L = 1.7 mm MIN.
E
NE76084-T1
Tape & reel
L = 1.0
± 0.2 mm
1000 pcs./reel
NE76084-T1A
Tape & reel
L = 1.0
± 0.2 mm
5000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDS
5.0
V
Gate to Source Voltage
VGS
–3.0
V
Gate to Drain Voltage
VGD
–5.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
240
mW
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PART NUMBER
NE76084
NE76084-2.4
PACKAGE CODE
84
84
UNIT
TEST CONDITIONS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Gate to Source Leak Current
IGSO
10
10
µAVGS = –4 V
Saturated Drain Current
IDSS
15
30
50
15
30
50
mA
VDS = 3 V, VGS = 0 V
Gate to Source Cutoff Voltage
VGS(off)
–0.5
–0.8
–3.0
–0.5
–0.8
–3.0
V
VDS = 3 V, IDS = 100
µA
Transconductance
gm
30
40
70
30
40
70
mS
VDS = 3 V, IDS = 10 mA
Noise Figure
NF
1.6
1.8
1.8
2.4
dB
VDS = 3 V, IDS = 10 mA
Associated Gain
Ga
8.0
9.0
8.0
9.0
dB
f = 12 GHz
C to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
Document No. P11843EJ2V0DS00 (2nd edition)
(Previous No. TC-2259)
Date Published August 1996 P
Printed in Japan
©
1989
DATA SHEET
1.78 ± 0.2
L
L
L
0.5 TYP.
L
4
2
3
1
E
PACKAGE DIMENSIONS
(Unit: mm)
1. Source
2. Drain
3. Source
4. Gate



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