1999 Apr 08

2

Philips Semiconductors

Product specification

NPN Darlington transistors

BCV29; BCV49

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 60 V)

• High DC current gain (min. 20000).

APPLICATIONS

• Preamplifier input applications.

DESCRIPTION

NPN small-signal Darlington transistor in a surface mount

SOT89 plastic package. PNP complements: BCV28 and

BCV48.

MARKING

TYPE NUMBER

MARKING CODE

BCV29

EF

BCV49

EG

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1

Simplified outline (SOT89) and symbol.

12

3

handbook, halfpage

MAM300

32

1

TR2

TR1

Bottom view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCV29

−

40

V

BCV49

−

80

V

collector-emitter voltage

BCV29

−

30

V

BCV49

−

60

V

emitter-base voltage

open collector

−

10

V

collector current (DC)

−

500

mA

peak collector current

−

1A

peak base current

−

200

mA

total power dissipation

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C