BCV49 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV29; BCV49

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BCV29

IE = 0; VCB =30V

−−

100

BCV49

IE = 0; VCB =60V

−−

100

IEBO

emitter cut-off current

IC = 0; VEB =10V

−−

100

hFE

DC current gain

VCE = 5 V; see Fig.2

BCV29

IC = 1 mA

4000

−−

IC = 10 mA

10000

−−

IC = 100 mA

20000

−−

IC = 500 mA

4000

−−

DC current gain

VCE = 5 V; see Fig.2

BCV49

IC = 1 mA

2000

−−

IC = 10 mA

4000

−−

IC = 100 mA

10000

−−

IC = 500 mA

2000

−−

VCEsat

collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA

−−

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB = 0.1 mA

−−

1.5

VBEon

base-emitter on-state voltage

IC = 10 mA; VCE =5V

−−

1.4

transition frequency

IC = 30 mA; VCE = 5 V; f = 100 MHz −

220

−

MHz

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