RN6002 datasheet(1/3 Pages) TOSHIBA

Part #	RN6002

Description	Motor Drive Circuit Applications / Power Amplifier Applications / Power Switching Applications

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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1 / 3 page

RN6002

2001-10-29

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN6002

Motor Drive Circuit Applications

Power Amplifier Applications

Power Switching Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Small flat package

l PC = 1~2W (mounted on ceramic substrate)

l Complementary to RN5002

Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Marking

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

−30

V

Collector-emitter voltage

VCEO

−30

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−2

A

Base current

IB

−0.4

A

Collector power dissipation

PC

500

mW

Collector power dissipation

PC *

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

* : Mounterd on ceramic substrate (250mm2 × 0.8t)

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05g (typ.)

Unit: mm

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