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RN6002 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN6002 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page ![]() RN6002 2001-10-29 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-offcurrent ICBO ― VCB = −30V, IE = 0 ― ― −0.1 µA Emitter cut-off current IEBO ― VEB = −5V, IC = 0 −0.68 −0.89 −1.28 mA Collector-emitter breakdown voltage V(BR)CES ― IC = −10mA −30 ― ― V hFE (1) VCE = −2V, IC = −0.5A 100 ― 360 DC current gain hFE (2) ― VCE = −2V, IC = −2.0A 50 ― ― ― Collector-emitter saturation voltage VCE (sat) ― IC = −1A, IB = −0.05A ― ― −0.5 V Base-emitter saturation voltage VBE (sat) ― IC = −1A, IB = −0.05A ― ― −1.2 V Transition frequency fT ― VCE = −2V, IC = −0.5A ― 120 ― MHz Collector output capacitance Cob ― VCB = −10V, IE = 0, f = 1 MHz ― 40 ― pF Resistor R ― ― 3.9 5.6 7.3 kΩ |
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