VB2201K

www.VBsemi.com

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = - 250 µA

- 200

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.5

- 4.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 200 V, VGS = 0 V

- 1

µA

VDS = - 200 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS  - 15 V, VGS = 10 V

- 1.0

A

Drain-Source On-Resistancea

RDS(on)

VGS  - 10 V, ID = - 0.5 A

0.80



VGS = - 6.0 V, ID = - 0.5 A

0.90

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 0.5 A

1.8

S

Diode Forward Voltage

VSD

IS = - 1.0 A, VGS = 0 V

- 0.85

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 100 V, VGS = 10 V

ID  - 0.5 A

8.0

12

nC

Gate-Source Charge

Qgs

1.3

Gate-Drain Charge

Qgd

2.5

Gate Resistance

Rg

f = 1.0 MHz

8.0



Input Capacitance

Ciss

VDS = - 25 V, VGS = 0 V, f = 1 MHz

370

510

pF

Output Capacitance

Coss

28

Reverse Transfer Capacitance

Crss

16

Switchingc

Turn-On Time

td(on)

VDD = - 100 V, RL = 100 

ID  - 1.0 A, VGEN = - 10 V

Rg = 6 

8

12

ns

tr

11

17

Turn-Off Time

td(off)

16

25

tf

11

17

Body Diode Reverse Recovery Charge

Qrr

IF = 0.5 A, dI/dt = 100 A/µs

140

200

nC

Notes:

a. Pulse test: PW

 300 µs duty cycle  2 %.

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under

“Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

2

Ω

Ω

Ω

服务热线：400-655-8788