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BCW81 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BCW81 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1997 Apr 02 2 Philips Semiconductors Product specification NPN general purpose transistor BCW81 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and high gain amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM255 Top view 2 3 1 MARKING TYPE NUMBER MARKING CODE BCW81 K3p QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V ICM peak collector current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW hFE DC current gain IC = 2 mA; VCE = 5 V 420 800 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − MHz |
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