BCW81 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Apr 02

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

BCW81

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base; IC =2mA

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

100

ICM

peak collector current

−

200

IBM

peak base current

−

200

Ptot

total power dissipation

Tamb ≤ 25 °C

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

100

IE = 0; VCB = 20 V; Tj = 100 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 2 mA; VCE = 5 V

420

−

800

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

120

250

IC = 50 mA; IB = 2.5 mA

−

210

−

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

750

−

IC = 50 mA; IB = 2.5 mA

−

850

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

550

−

700

collector capacitance

IE =Ie = 0; VCB =10V; f=1MHz

−

2.5

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

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