BCY78IX datasheet(5/8 Pages) PHILIPS

5 / 8 page

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

PNP switching transistors

BCY78; BCY79

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

ICon = −10 mA; IBon = −1 mA;

IBoff = 1 mA; test conditions A

−−

100

delay time

−−

rise time

−−

toff

turn-off time

−−

700

storage time

−−

600

fall time

−−

100

ton

turn-on time

ICon = −100 mA; IBon = −10 mA;

IBoff = 10 mA; test conditions B

−−

100

delay time

−−

rise time

−−

toff

turn-off time

−−

400

storage time

−−

300

fall time

−−

100

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Test conditions A

Vi = −5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns.

R1 = 56

Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.

VBB = 1.9 V; VCC = −3V

Oscilloscope input impedance Zi =50 Ω.

Fig.2 Test circuit for switching times.

ndbook, full pagewidth

DUT

MGD624

(probe)

450

Ω

(probe)

450

Ω

oscilloscope

VBB

VCC

Test conditions B

Vi = −9.8 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns.

R1 = 62

Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω.

VBB = 3.4 V; VCC = −10.8 V

Oscilloscope input impedance Zi =50 Ω.

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