BCY78IX datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

PNP switching transistors

BCY78; BCY79

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BCY78

IE = 0; VCB = −32 V

−−2

−15

IE = 0; VCB = −32 V; Tamb = 150 °C

−−−10

µA

ICBO

collector cut-off current

BCY79

IE = 0; VCB = −45 V

−−2

−15

IE = 0; VCB = −45 V; Tamb = 150 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−20

hFE

DC current gain

IC = −10 µA; VCE = −5V

BCY78/VII; BCY79/VII

−

140

−

BCY78/VIII; BCY79/VIII

200

−

BCY78/IX; BCY79/IX

270

−

BCY78/X

100

340

−

hFE

DC current gain

IC = −2 mA; VCE = −5V

BCY78/VII; BCY79/VII

120

170

220

BCY78/VIII; BCY79/VIII

180

250

310

BCY78/IX; BCY79/IX

250

350

460

BCY78/X

380

500

630

hFE

DC current gain

IC = −10 mA; VCE = −1V

BCY78/VII; BCY79/VII

180

−

BCY78/VIII; BCY79/VIII

120

260

400

BCY78/IX; BCY79/IX

160

360

630

BCY78/X

240

500

1000

hFE

DC current gain

IC = −100 mA; VCE = −1V

BCY78/VII; BCY79/VII

−−

BCY78/VIII; BCY79/VIII

−−

BCY78/IX; BCY79/IX

−−

BCY78/X

−−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −250 µA

−−120 −250

IC = −100 mA; IB = −2.5 mA

−−400 −800

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −250 µA

−600 −700 −850

IC = −100 mA; IB = −2.5 mA

−700 −850 −1200 mV

VBE

base-emitter voltage

IC = −10 µA; VCE = −5V

−−550 −

IC = −2 mA; VCE = −5V

−600 −650 −750

IC = −10 mA; VCE = −1V

−−650 −

IC = −100 mA; VCE = −1V

−−750 −

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

7pF

emitter capacitance

IC =ic = 0; VEB = −500 mV; f = 1 MHz

−−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

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