1999 Apr 21

2

Philips Semiconductors

Product specification

PNP power transistor

BD830

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• General purpose

• Driver stages in hi-fi amplifiers and television circuits.

DESCRIPTION

PNP power transistor in a TO-202; SOT128B plastic

package. NPN complement: BD829.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to metal part of

mounting surface

3

base

Fig.1

Simplified outline (TO-202; SOT128B)

and symbol.

handbook, halfpage

2

1

3

MAM304

12 3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−100

V

collector-emitter voltage

open base

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1A

peak collector current

−−1.5

A

peak base current

−−500

mA

total power dissipation

−

2W

−

8W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C