BD830 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 21

Philips Semiconductors

Product speciﬁcation

PNP power transistor

BD830

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

62.5

K/W

Rth j-mb

thermal resistance from junction to mounting base

12.5

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−−100 nA

IE = 0; VCB = −30 V; Tj = 125 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

VCE = −2 V; see Fig.2

IC = −5mA

−−

IC = −150 mA

−

250

IC = −500 mA

−−

VCEsat

collector-emitter saturation voltage IC = −500 mA; IB = −50 mA

−−−500 mV

VBE

base-emitter voltage

IC = −500 mA; VCE = −2V

−−−1V

transition frequency

IC = −50 mA; VCE = −5 V; f = 100 MHz −

−

MHz

Fig.2 DC current gain; typical values.

handbook, full pagewidth

160

120

MBH730

−10−1

hFE

−1

IC (mA)

−10

−103

−104

−102

VCE = −2 V

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