1999 Apr 29

2

Philips Semiconductors

Product specification

PNP BISS-transistor

BDL32

FEATURES

• High current (max. 5 A)

• Low voltage (max. 10 V)

• Low collector-emitter saturation voltage ensures

reduced power consumption.

APPLICATIONS

• Battery powered units where high current and low power

consumption are important.

DESCRIPTION

PNP BISS (Breakthrough In Small Signal) transistor in a

SOT223 plastic package. NPN complement: BDL31.

PINNING

PIN

DESCRIPTION

1

base

2

not connected

3

emitter

4

collector

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM373

Top view

3

4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−15

V

collector-emitter voltage

open base

−−10

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−5A

peak collector current

−−10

A

peak base current

−−1A

total power dissipation

−

1.35

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C