2000 Mar 29

2

Philips Semiconductors

Product specification

N-channel dual-gate PoLo MOS-FETs

BF1201; BF1201R;

BF1201WR

FEATURES

• Short channel transistor with high

forward transfer admittance to input

capacitance ratio

• Low noise gain controlled amplifier

• Partly internal self-biasing circuit to

ensure good cross-modulation

performance during AGC and good

DC stabilization.

APPLICATIONS

• VHF and UHF applications with

3 to 9 V supply voltage, such as

digital and analogue television

tuners and professional

communications equipment.

DESCRIPTION

Enhancement type N-channel

field-effect transistor with source and

substrate interconnected. Integrated

diodes between gates and source

protect against excessive input

voltage surges. The BF1201,

BF1201R and BF1201WR are

encapsulated in the SOT143B,

SOT143R and SOT343R plastic

packages respectively.

PINNING

PIN

DESCRIPTION

1

source

2

drain

3

gate 2

4

gate 1

handbook, 2 columns

Top view

MSB014

12

3

4

Fig.1

Simplified outline

(SOT143B).

BF1201 marking code: LAp.

handbook, 2 columns

Top view

MSB035

1

2

4

3

Fig.2

Simplified outline

(SOT143R).

BF1201R marking code: LBp

page

Top view

MSB842

21

4

3

Fig.3

Simplified outline

(SOT343R).

BF1201WR marking code: LA

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−

10

V

drain current

−−

30

mA

total power dissipation

−−

200

mW

y

forward transfer admittance

23

28

35

mS

input capacitance at gate 1

−

2.6

3.1

pF

reverse transfer capacitance

f = 1 MHz

−

15

30

fF

F

noise figure

f = 400 MHz

−

1

1.8

dB

cross-modulation

input level for k = 1% at

40 dB AGC

105

−−

dB

µV

operating junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.