BF1201 datasheet(4/16 Pages) PHILIPS

4 / 16 page

2000 Mar 29

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate PoLo MOS-FETs

BF1201; BF1201R;

BF1201WR

STATIC CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Note

1. RG1 connects G1 to VGG =5V.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise speciﬁed.

Note

1. Measured in Fig.21 test circuit.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VG1-S =VG2-S = 0; ID =10 µA10

−

V(BR)G1-SS gate 1-source breakdown voltage

VG2-S =VDS = 0; IG1-S =10mA

−

V(BR)G2-SS gate 2-source breakdown voltage

VG1-S =VDS = 0; IG2-S =10mA

−

V(F)S-G1

forward source-gate 1 voltage

VG2-S =VDS = 0; IS-G1 = 10 mA

0.5

1.5

V(F)S-G2

forward source-gate 2 voltage

VG1-S =VDS = 0; IS-G2 = 10 mA

0.5

1.5

VG1-S(th)

gate 1-source threshold voltage

VG2-S =4V; VDS =5V; ID = 100 µA

0.3

1.0

VG2-S(th)

gate 2-source threshold voltage

VG1-S =VDS =5V; ID = 100 µA

0.3

1.2

IDSX

drain-source current

VG2-S =4V; VDS =5V; RG1 =62kΩ;

note 1

IG1-SS

gate 1 cut-off current

VG2-S =VDS = 0; VG1-S =5V

−

IG2-SS

gate 2 cut-off current

VG1-S =VDS = 0; VG2-S =4V

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

y

fs

forward transfer admittance

pulsed; Tj =25 °C

232835mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

−

2.6

3.1

Cig2-ss

input capacitance at gate 2

f = 1 MHz

−

1.1

−

Coss

output capacitance

f = 1 MHz

−

0.9

−

Crss

reverse transfer capacitance f = 1 MHz

−

noise ﬁgure

f = 10.7 MHz; GS = 20 mS; BS =0

−

57dB

f = 400 MHz; YS =YS opt

−

1.8

f = 800 MHz; YS =YS opt

−

1.9

2.5

Gtr

power gain

f = 200 MHz; GS = 2 mS; BS =BS opt;

GL = 0.5 mS; BL =BL opt;

−

33.5

−

f = 400 MHz; GS = 2 mS; BS =BS opt;

GL = 1 mS; BL =BL opt;

−

f = 800 MHz; GS = 3.3 mS; BS =BS opt;

GL = 1 mS; BL =BL opt;

−

Xmod

cross-modulation

input level for k = 1%; fw = 50 MHz;

funw = 60 MHz; note 1

at 0 dB AGC

−−

µV

at 10 dB AGC

−

µV

at 40 dB AGC

105

−−

µV

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