BF324 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jul 07

Philips Semiconductors

Product speciﬁcation

PNP medium frequency transistor

BF324

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−30

VCEO

collector-emitter voltage

open base

−−30

VEBO

emitter-base voltage

open collector

−−4V

collector current (DC)

−−25

ICM

peak collector current

−−25

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient note 1

420

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−−50

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−100

hFE

DC current gain

VCE = −10 V

IC = −1mA

−

IC = −4mA

−−

VBE

base-emitter voltage

IC = −4 mA; VCE = −10 V

−

760

−

Crb

feedback capacitance

IC = 0; VCE = −10 V; f = 1 MHz

−−

0.3

transition frequency

VCE = −10 V; f = 100 MHz

IC = −1mA

−

350

−

MHz

IC = −4 mA

400

450

−

MHz

IC = −8mA

−

440

−

MHz

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