BF421 datasheet(3/6 Pages) PHILIPS

3 / 6 page

2004 Nov 10

Philips Semiconductors

Product speciﬁcation

PNP high voltage transistors

BF421; BF423

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on a printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on a printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BF421

−−300

BF423

−−250

VCEO

collector-emitter voltage

open base

BF421

−−300

BF423

−−250

VEBO

emitter-base voltage

open collector

−−5V

collector current (DC)

−−50

ICM

peak collector current

−−100

IBM

peak base current

−−50

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

830

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −200 V; IE =0 A

−−10

VCB = −200 V; IE = 0 A; Tj = 150 °C

−−10

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0 A

−−50

hFE

DC current gain

VCE = −20 V; IC = −25 mA

−

VCEsat

collector-emitter saturation voltage

IC = −30 mA; IB = −5mA

−−0.6

Cre

feedback capacitance

VCE = −30 V; IC =ic = 0 A; f = 1 MHz

−

1.6

transition frequency

VCE = −10 V; IC = −10 mA; f = 100 MHz

−

MHz

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