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LM5100B Datasheet(PDF) 12 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LM5100B
Description  3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
PDF  15 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5100B Datasheet(HTML) 12 Page - National Semiconductor (TI)

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Power Dissipation Considerations
(Continued)
Larger capacitive loads require more energy to recharge the
bootstrap capacitor resulting in more losses. Higher input
voltages (V
IN) to the half bridge result in higher reverse
recovery losses. The following plot was generated based on
calculations and lab measurements of the diode recovery
time and current under several operating conditions. This
can be useful for approximating the diode power dissipation.
The total IC power dissipation can be estimated from the
previous plots by summing the gate drive losses with the
bootstrap diode losses for the intended application.
Diode Power Dissipation V
IN = 50V
20203106
www.national.com
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