BF511 datasheet(3/7 Pages) PHILIPS

3 / 7 page

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Note

1. Mounted on a ceramic substrate of 8 mm

× 10 mm × 0.7 mm.

STATIC CHARACTERISTICS

Tamb =25 °C

Drain-source voltage

VDS

max.

20 V

Drain-gate voltage (open source)

VDGO

max.

20 V

Drain current (DC or average)

max.

30 mA

Gate current

± I

max.

10 mA

Total power dissipation up to Tamb =40 °C (note 1)

Ptot

max.

250 mW

Storage temperature range

Tstg

−65 to + 150 °C

Junction temperature

max.

150

°C

From junction to ambient (note 1)

Rth j-a

430 K/W

BF510

511

512

513

Gate cut-off current

−VGS = 0.2 V; VDS =0

−IGSS

10 nA

Gate-drain breakdown voltage

IS =0; −ID =10 µA

−V(BR)GDO

20 V

Drain current

0.7

3.0

2.5

7.0

VDS = 10 V; VGS =0

IDSS

Gate-source cut-off voltage

ID =10 µA; VDS = 10 V

−V(P)GS

typ.

0.8

1.5

2.2

3 V

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