BF511 datasheet(4/7 Pages) PHILIPS

4 / 7 page

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

DYNAMIC CHARACTERISTICS

Measuring conditions (common source):

VDS = 10 V; VGS = 0; Tamb =25 °C for BF510 and BF511

VDS = 10 V; ID = 5 mA; Tamb =25 °C for BF512 and BF513

y-parameters (common source)

BF510

511

512

513

Input capacitance at f = 1 MHz

Cis

5555 pF

Input conductance at f = 100 MHz

gis

typ.

100

µS

Feedback capacitance at f = 1 MHz

Crs

typ.

0.4

0.4 pF

0.5

0.5 pF

Transfer admittance at f = 1 kHz

 yfs >

2.5

4.0

3.5 mS

VGS = 0 instead of ID = 5 mA

 yfs >

−

6.0

7.0 mS

Transfer admittance at f = 100 MHz

 y

fs 

typ.

3.5

5.5

5.0

5.0 mS

Output capacitance at f = 1 MHz

Cos

3333 pF

Output conductance at f = 1 MHz

gos

100

120

µS

Output conductance at f = 100 MHz

gos

typ.

µS

Noise ﬁgure at optimum source admittance

GS = 1 mS; −BS = 3 mS;

f = 100 MHz

typ.

1.5

1.5 dB

Fig.2

VGS = 0 for BF510 and BF511;

ID = 5 mA for BF512 and BF513;

f = 1 MHz; Tamb = 25 °C.

handbook, halfpage

typ

1.5

0.5

Crs

(pF)

VDS (V)

MDA275

Fig.3

VDS = 10 V; f = 1 kHz; Tamb =25 °C; typical

values.

handbook, halfpage

|yfs|

(mS)

ID (mA)

MDA276

BF511

BF510

BF512

BF513

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