BF545A datasheet(5/12 Pages) PHILIPS

5 / 12 page

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF545A; BF545B; BF545C

DYNAMIC CHARACTERISTICS

Tamb =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

TYP.

UNIT

Cis

input capacitance

VDS =15V; VGS = −10 V; f = 1 MHz

1.7

VDS =15V; VGS = 0; f = 1 MHz

Crs

reverse transfer capacitance

VDS =15V; VGS = −10 V; f = 1 MHz

0.8

VDS =15V; VGS = 0; f = 1 MHz

0.9

gis

common source input conductance VDS =10V; ID = 1 mA; f = 100 MHz

µS

VDS =10V; ID = 1 mA; f = 450 MHz

300

µS

gfs

common source transfer

conductance

VDS =10V; ID = 1 mA; f = 100 MHz

VDS =10V; ID = 1 mA; f = 450 MHz

1.8

grs

common source reverse

conductance

VDS =10V; ID = 1 mA; f = 100 MHz

−6

µS

VDS =10V; ID = 1 mA; f = 450 MHz

−40

µS

gos

common source output

conductance

VDS =10V; ID = 1 mA; f = 100 MHz

µS

VDS =10V; ID = 1 mA; f = 450 MHz

µS

Fig.3

Drain current as a function of gate-source

cut-off voltage; typical values.

VDS = 15 V; Tj =25 °C.

handbook, halfpage

−2

−4

−8

−6

MBB467

IDSS

(mA)

VGSoff (V)

Fig.4

Forward transfer admittance as a

function of gate-source cut-off voltage;

typical values.

VDS = 15 V; VGS = 0; Tj =25 °C.

handbook, halfpage

−2

−4

−8

MBB466

−6

VGSoff (V)

Yfs

(mS)

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