BF545A datasheet(4/12 Pages) PHILIPS

4 / 12 page

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF545A; BF545B; BF545C

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

STATIC CHARACTERISTICS

Tj =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage IG = −1 µA; VDS =0

−30

−−

VGSoff

gate-source cut-off voltage

ID = 200 µA; VDS =15V

BF545A

−0.4

−−2.2

BF545B

−1.6

−−3.8

BF545C

−3.2

−−7.8

ID =1 µA; VDS =15V

−0.4

−−7.5

IDSS

drain current

VGS = 0; VDS =15V

BF545A

−

6.5

BF545B

−

BF545C

−

IGSS

gate leakage current

VGS = −20 V; VDS =0

−−0.5

−1000

VGS = −20 V; VDS =0;

Tj = 125 °C

−−−100

yfs

forward transfer admittance

VGS = 0; VDS =15V

−

6.5

yos

common source output

admittance

VGS = 0; VDS =15V

−

−µS

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