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BF550 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF550 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 Apr 15 3 Philips Semiconductors Product specification PNP medium frequency transistor BF550 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−−50 nA IEBO emitter cut-off current IC = 0; VEB = −3V −−−100 nA hFE DC current gain IC = −1 mA; VCE = −10 V 50 −− VBE base-emitter voltage IC = −1 mA; VCE = −10 V − 750 − mV Cre feedback capacitance IC = −1 mA; VCB = −10 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = −1 mA; VCE = −10 V; f = 100 MHz − 325 − MHz |
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