1996 Jul 29

2

Philips Semiconductors

Product specification

N-channel silicon junction

field-effect transistors

BF556A; BF556B; BF556C

FEATURES

• Low leakage level (typ. 500 fA)

• High gain

• Low cut-off voltage.

APPLICATIONS

• Impedance converters in e.g. electret microphones and

infra-red detectors

• VHF amplifiers in oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect

transistors in a SOT23 package.

PINNING - SOT23

PIN

SYMBOL

DESCRIPTION

1

s

source

2

d

drain

3

g

gate‘

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline and symbol.

Marking codes:

BF556A: M84.

BF556B: M85.

BF556C: M86.

handbook, halfpage

s

d

g

21

3

MAM036

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−±30

V

gate-source cut-off voltage

−0.5

−7.5

V

drain current

BF556A

3

7

mA

BF556B

6

13

mA

BF556C

11

18

mA

total power dissipation

−

250

mW

y

forward transfer admittance

4.5

−

mS