1999 Jun 29

3

Philips Semiconductors

Preliminary specification

N-channel junction FET

BF862

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134)

THERMAL CHARACTERISTICS

Notes

1.

Soldering point of the gate lead.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

20

V

drain-gate voltage

−

20

V

gate-source voltage

−−20

V

drain-source current

−

40

mA

forward gate current

−

10

mA

total power dissipation

≤ 92 °C

−

225

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to soldering point

note 1

260

K/W

Fig.2 Power derating curve.

handbook, halfpage

0

40

80

160

250

0

200

MGS298

120

150

100

50

Ptot

(mW)

Ts (°C)