BF862 datasheet(4/7 Pages) PHILIPS

4 / 7 page

1999 Jun 29

Philips Semiconductors

Preliminary specification

N-channel junction FET

BF862

STATIC CHARACTERISTICS

Tj =25

°C unless otherwise specified.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25

°C; VGS =0; VDS = 8 V; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage

IGS =

−1 µA; VDS =0

−20

−−

VGS

gate-source forward voltage

VDS =0; IG =1mA

−−

VGS (off)

gate-source cut-off voltage

VDS =8V; ID =1

µA

−−0.7

−

IGSS

reverse gate current

VGS =

−15 V; VDS =0

−−

−1nA

IDSS

drain-source current

VGS =0; VDS =8V

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

yfs

common source forward transfer

admittance

Tj =25

°C30

−

gos

common source output

conductance

Tj =25

°C

−−

400

µS

Ciss

input capacitance

f = 1 MHz

−

Crss

reverse transfer capacitance

f = 1 MHz

−

2.5

−

equivalent noise input voltage

f = 100 kHz

−

0.8

−

nV/

√Hz

transition frequency

−

640

−

MHz

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