BFG505SLASHX datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero.

2. IC = 5 mA; VCE =6V; RL =50 Ω; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz;

measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = 2.5 µA; IE =0

−−

V(BR)CES

collector-emitter breakdown voltage IC =10 µA; RBE =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 2.5 µA; IC = 0

2.5

−−

ICBO

collector leakage current

VCB =6V; IE =0

−−

hFE

DC current gain

IC = 5 mA; VCE = 6 V see Fig.3

120

250

transition frequency

IC = 5 mA; VCE = 6 V; f = 1 GHz;

Tamb =25 °C; see Fig.5

−

GHz

collector capacitance

IE =ie = 0; VCB =6V; f=1MHz

−

0.3

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

0.4

−

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz;

see Fig.4

−

0.2

−

GUM

maximum unilateral power gain;

note 1

IC = 5 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

IC = 5 mA; VCE = 6 V; f = 2 GHz;

Tamb =25 °C

−

|S21|2

insertion power gain

IC = 5 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

Γs =Γopt; IC = 1.25 mA; VCE =6V;

f = 900 MHz

−

1.2

1.7

s =Γopt; IC = 5 mA; VCE =6V;

f = 900 MHz

−

1.6

2.1

s =Γopt; IC = 1.25 mA; VCE =6V;

f = 2 GHz

−

1.9

−

PL1

output power at 1 dB gain

compression

IC = 5 mA; VCE = 6 V; f = 900 MHz;

RL =50 Ω; Tamb =25 °C

−

dBm

ITO

third order intercept point

note 2

−

dBm

–

() 1S

–

()

-------------------------------------------------------------- dB.

log

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