BFG505SLASHX datasheet(7/16 Pages) PHILIPS

7 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE =6V.

handbook, halfpage

MLC038

(dB)

(mA)

f = 2000 MHz

1000 MHz

900 MHz

500 MHz

10 1

Fig.11 Associated available gain as a function of

collector current; typical values.

VCE =6V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

MRA650

2000 MHz

1000 MHz

2000 MHz

1000 MHz

f = 900 MHz

Fmin

900 MHz

500 MHz

Gass

10−1

Fig.12 Minimum noise figure as a function

of frequency; typical values.

VCE =6V.

handbook, halfpage

MLC039

(dB)

f (MHz)

10 4

10 3

10 2

= 5 mA

1.25 mA

Fig.13 Associated available gain as a function

of frequency; typical values.

VCE =6V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

MRA651

102

104

103

Gass

5 mA

Fmin

5 mA

1.25 mA

IC = 1.25 mA

BFG505/X Datasheet(PDF) 7 Page - NXP Semiconductors

BFG505/X Datasheet(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL