BFG540SLASHX datasheet(4/16 Pages) PHILIPS

4 / 16 page

2000 May 23

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

2. VCE = 8 V; IC = 40 mA; RL =50 Ω; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz;

measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.

3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL =ZS =75 Ω; Tamb =25 °C;

Vp =VO; Vq =VO −6 dB; Vr =VO −6 dB;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;

measured at f(p+q − r) = 793.25 MHz.

4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb =25 °C;

fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =8V

−−

hFE

DC current gain

IC = 40 mA; VCE = 8 V

120

250

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

collector capacitance

IE =ie = 0; VCB =8V; f=1MHz

−

0.9

−

Cre

feedback capacitance

IC = 0; VCB = 8 V; f = 1 MHz

−

0.5

−

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

IC = 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25 °C

−

insertion power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

s = Γopt; IC = 10 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

1.3

1.8

s = Γopt; IC = 40 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

1.9

2.4

s = Γopt; IC = 10 mA; VCE =8V;

f = 2 GHz; Tamb =25 °C

−

2.1

−

PL1

output power at 1 dB gain

compression

IC = 40 mA; VCE =8V; RL =50 Ω;

f = 900 MHz; Tamb =25 °C

−

dBm

ITO

third order intercept point

note 2

−

dBm

output voltage

note 3

−

500

−

second order intermodulation

distortion

note 4

−−50

−

–

() 1s

–

()

-------------------------------------------------------- dB.

log

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