BFG540SLASHX datasheet(7/16 Pages) PHILIPS

7 / 16 page

2000 May 23

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

Fig.11 Intermodulation distortion as a function of

collector current.

handbook, halfpage

−20

−70

−60

−50

−40

−30

dim

(dB)

IC (mA)

MEA973

Fig.12 Second order intermodulation distortion as

a function of collector current.

handbook, halfpage

−20

−70

−60

−50

−40

−30

(dB)

IC (mA)

MEA972

Fig.13 Minimum noise figure and associated

available gain as functions of collector

current.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

MRA760

102

2000 MHz

1000 MHz

2000 MHz

1000 MHz

f = 900 MHz

Gass

Fmin

900 MHz

500 MHz

Fig.14 Minimum noise figure and associated

available gain as functions of frequency.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

MRA761

102

104

103

Gass

10 mA

Fmin

40 mA

IC = 10 mA

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